Title : Fabrication of silicon p-n and Si-As/sub2/ Te/sub3/ Junctions and studies of their electrical and photorotolaic properties

Type of Material: Thesis
Title: Fabrication of silicon p-n and Si-As/sub2/ Te/sub3/ Junctions and studies of their electrical and photorotolaic properties
Researcher: Bhattarchaya, Dilip Kumar
Guide: Abhai, ManSingh
Department: Department of Physics and Astrophysics
Publisher: University of Delhi
Place: Delhi
Year: 1986
Language: English
Subject: Physics and Astrophysics
Accession No: Th 0007147%36074
Dissertation/Thesis Note: PhD

00000000ntm a2200000ua 4500
001177973
003IN-AhILN
0052011-01-13 00:00:00
008__071130t1986||||ii#||||g|m||||||||||eng||
035__|a(IN-AhILN)th_177973
040__|aDELI_110007|dIN-AhILN
041__|aeng
100__|aBhattarchaya, Dilip Kumar|eResearcher
110__|aDepartment of Physics and Astrophysics|bUniversity of Delhi|dDelhi
245__|aFabrication of silicon p-n and Si-As/sub2/ Te/sub3/ Junctions and studies of their electrical and photorotolaic properties
260__|aDelhi|bUniversity of Delhi|c1986
502__|bPhD
653__|aPhysics and Astrophysics
700__|aAbhai, ManSingh|eGuide
852__|pTh 0007147%36074
905__|anotification

User Feedback Comes Under This section.