Title : investigation of light ion implantation demage and its aannealing in P-type silicon

Type of Material: Thesis
Title: investigation of light ion implantation demage and its aannealing in P-type silicon
Researcher: Jain, Amitabh
Guide: Bhattacharyya, A B
Department: Department of Physics
Publisher: Indian Institute of Technology-Delhi
Place: New Delhi
Year: 1978
Language: English
Subject: Physics
Modern Physics
Nuclear Physics
Nuclear Reaction
Physics
Dissertation/Thesis Note: PhD

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035__|a(IN-AhILN)th_17661
040__|aIITD_110016|dIN-AhILN
041__|aeng
100__|aJain, Amitabh|eResearcher
110__|aDepartment of Physics|bIndian Institute of Technology-Delhi|dNew Delhi|eIn
245__|ainvestigation of light ion implantation demage and its aannealing in P-type silicon
260__|aNew Delhi|bIndian Institute of Technology-Delhi|c1978
502__|bPhD
650__|aPhysics|2UGC
653__|aPhysics
653__|aModern Physics
653__|aNuclear Physics
653__|aNuclear Reaction
700__|aBhattacharyya, A B|eGuide
905__|anotification

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