| Type of Material: | Thesis |
| Title: | Silicon-germanium Heterostructures for High and Low Voltage Applications |
| Researcher: | Khanduri, Gargan Mohan |
| Guide: | Panwar, B S | Kumar, M J |
| Department: | Centre for Applied Research in Electronics |
| Publisher: | Indian Institute of Technology Delhi |
| Place: | New Delhi |
| Year: | 2006 |
| Language: | English |
| Subject: | Engineering Science | Electronics and Communication Engineering |
| Accession No: | 45(12) |
| Dissertation/Thesis Note: | PhD |
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| 001 | 167370 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 040 | __ | |aIITD_110016|dIN-AhILN |
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| 100 | __ | |aKhanduri, Gargan Mohan|eResearcher |
| 110 | __ | |aCentre for Applied Research in Electronics|bIndian Institute of Technology Delhi|dNew Delhi |
| 245 | __ | |aSilicon-germanium Heterostructures for High and Low Voltage Applications |
| 260 | __ | |aNew Delhi|bIndian Institute of Technology Delhi|c2006 |
| 502 | __ | |bPhD |
| 653 | __ | |aEngineering Science |
| 653 | __ | |aElectronics and Communication Engineering |
| 700 | __ | |aPanwar, B S|eGuide |
| 700 | __ | |aKumar, M J|eGuide |
| 852 | __ | |p45(12) |
| 905 | __ | |anotification |
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