| Type of Material: | Thesis |
| Title: | Studies on electrical properties of thermally grown silicon dioxide (SiO2) in presence of 1,1,1,trichloroethane,TCA |
| Researcher: | Bhan, Rajinder Kumar |
| Department: | Department of Physics |
| Publisher: | University of Delhi |
| Place: | New Delhi |
| Year: | 1994 |
| Language: | English |
| Subject: | Physical Sciences | Physics | Physics |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 153701 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 941231t1994||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_153701 |
| 040 | __ | |aDELI_110007|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aBhan, Rajinder Kumar|eResearcher |
| 110 | __ | |aDepartment of Physics|bUniversity of Delhi|dNew Delhi|eIn |
| 245 | __ | |aStudies on electrical properties of thermally grown silicon dioxide (SiO2) in presence of 1,1,1,trichloroethane,TCA |
| 260 | __ | |aNew Delhi|bUniversity of Delhi|c1994 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysical Sciences |
| 653 | __ | |aPhysics |
| 905 | __ | |anotification |
User Feedback Comes Under This section.