| Type of Material: | Thesis |
| Title: | Electrical properties of tin doped indium oxide silicon structure |
| Researcher: | Biswas, Swati |
| Guide: | Singh, Abhai Man |
| Department: | Department of Physics |
| Publisher: | University of Delhi |
| Place: | New Delhi |
| Year: | 1990 |
| Language: | English |
| Subject: | Physics | Chemical Physics | Physics |
| Dissertation/Thesis Note: | PhD |
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| 110 | __ | |aDepartment of Physics|bUniversity of Delhi|dNew Delhi|eIn |
| 245 | __ | |aElectrical properties of tin doped indium oxide silicon structure |
| 260 | __ | |aNew Delhi|bUniversity of Delhi|c1990 |
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| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aChemical Physics |
| 700 | __ | |aSingh, Abhai Man|eGuide |
| 905 | __ | |anotification |
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