| Type of Material: | Thesis |
| Title: | Modeling and characterisation of spontaneous and piezo electric polarisation dependent lattioe mismatched a1GaN/GaN high elegtron mobility transistors(HEMTs)for microwave and millimeter wave application |
| Researcher: | Rashmi |
| Department: | Department of Electronics Science |
| Publisher: | University of Delhi |
| Place: | New Delhi |
| Year: | 2002 |
| Language: | English |
| Subject: | Engineering Science | Electronics Science |
| Accession No: | Vol 40 Issue 32 |
| Dissertation/Thesis Note: | PhD |
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| 001 | 116463 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 021231t2002||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_116463 |
| 040 | __ | |aDELI_110007|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aRashmi|eResearcher |
| 110 | __ | |aDepartment of Electronics Science|bUniversity of Delhi|dNew Delhi|eIn |
| 245 | __ | |aModeling and characterisation of spontaneous and piezo electric polarisation dependent lattioe mismatched a1GaN/GaN high elegtron mobility transistors(HEMTs)for microwave and millimeter wave application |
| 260 | __ | |aNew Delhi|bUniversity of Delhi|c2002 |
| 502 | __ | |bPhD |
| 653 | __ | |aEngineering Science |
| 653 | __ | |aElectronics Science |
| 852 | __ | |pVol 40 Issue 32 |
| 905 | __ | |anotification |
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