| Type of Material: | Thesis |
| Title: | Study of interface states in Si-SiO2 systems grown by different oxidation techniques |
| Researcher: | Duggirala, Krishna Rao |
| Guide: | Majhi, J |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Technology-madras |
| Place: | Chennai |
| Year: | 1985 |
| Language: | English |
| Subject: | Physics | States Of Matter | Physics |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 111255 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 851231t1985||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_111255 |
| 040 | __ | |aIITM_600036|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aDuggirala, Krishna Rao|eResearcher |
| 110 | __ | |aDepartment of Physics|bIndian Institute of Technology-madras|dChennai|eIn |
| 245 | __ | |aStudy of interface states in Si-SiO2 systems grown by different oxidation techniques |
| 260 | __ | |aChennai|bIndian Institute of Technology-madras|c1985 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aStates Of Matter |
| 700 | __ | |aMajhi, J|eGuide |
| 905 | __ | |anotification |
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