| Type of Material: | Thesis |
| Title: | Reactive sputtering of gallium nitride thin films and the electrical characterisation of GaN/GaAs metal insulator semiconductor diode structures |
| Researcher: | Enjeti, Lakshmi |
| Guide: | Bhattacharya, A P |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Technology-delhi |
| Place: | New Delhi |
| Year: | 1983 |
| Language: | English |
| Subject: | Physics | States of Matter | Solid State | Thin Films | Physics |
| Dissertation/Thesis Note: | PhD |
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| 001 | 110921 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 831231t1983||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_110921 |
| 040 | __ | |aIITD_110016|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aEnjeti, Lakshmi|eResearcher |
| 110 | __ | |aDepartment of Physics|bIndian Institute of Technology-delhi|dNew Delhi|eIn |
| 245 | __ | |aReactive sputtering of gallium nitride thin films and the electrical characterisation of GaN/GaAs metal insulator semiconductor diode structures |
| 260 | __ | |aNew Delhi|bIndian Institute of Technology-delhi|c1983 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aStates of Matter |
| 653 | __ | |aSolid State |
| 653 | __ | |aThin Films |
| 700 | __ | |aBhattacharya, A P|eGuide |
| 905 | __ | |anotification |
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