| Type of Material: | Thesis |
| Title: | Physical investigations on antimony doped tin oxide films and their applications in heterojunction solar cells |
| Researcher: | Srinivasa Murty, Nagavolu |
| Guide: | Jawalekar, S R |
| Department: | Department of Electrical Engineering |
| Publisher: | Indian Institute of Technology-bombay |
| Place: | Mumbai |
| Year: | 1983 |
| Language: | English |
| Subject: | Engineering | Electronics Engineering | Short and Long Wave Electronics | Microelectronics | Electrical Engineering |
| Dissertation/Thesis Note: | PhD |
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| 001 | 110842 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 100 | __ | |aSrinivasa Murty, Nagavolu|eResearcher |
| 110 | __ | |aDepartment of Electrical Engineering|bIndian Institute of Technology-bombay|dMumbai|eIn |
| 245 | __ | |aPhysical investigations on antimony doped tin oxide films and their applications in heterojunction solar cells |
| 260 | __ | |aMumbai|bIndian Institute of Technology-bombay|c1983 |
| 502 | __ | |bPhD |
| 650 | __ | |aElectrical Engineering|2UGC |
| 653 | __ | |aEngineering |
| 653 | __ | |aElectronics Engineering |
| 653 | __ | |aShort and Long Wave Electronics |
| 653 | __ | |aMicroelectronics |
| 700 | __ | |aJawalekar, S R|eGuide |
| 905 | __ | |anotification |
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