| Type of Material: | Thesis |
| Title: | Studies in the development and characterization of ETCH induced MOS guard ring protected Schottky barrier diodes |
| Researcher: | Sreenath, R N |
| Guide: | Suriyanarayana, G | Savoor, K R |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Science |
| Place: | Bangalore |
| Year: | 1984 |
| Language: | English |
| Subject: | Physics | Electronics | Electrodynamics | Conduction | Semi Conductor | Physics |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 110608 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 841231t1984||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_110608 |
| 040 | __ | |aIISC_560012|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aSreenath, R N|eResearcher |
| 110 | __ | |eIn|dBangalore|bIndian Institute of Science|aDepartment of Physics |
| 245 | __ | |aStudies in the development and characterization of ETCH induced MOS guard ring protected Schottky barrier diodes |
| 260 | __ | |aBangalore|bIndian Institute of Science|c1984 |
| 502 | __ | |bPhD |
| 650 | __ | |2UGC|aPhysics |
| 653 | __ | |aPhysics |
| 653 | __ | |aElectronics |
| 653 | __ | |aElectrodynamics |
| 653 | __ | |aConduction |
| 653 | __ | |aSemi Conductor |
| 700 | __ | |eGuide|aSuriyanarayana, G |
| 700 | __ | |aSavoor, K R|eGuide |
| 905 | __ | |anotification |
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