| Type of Material: | Thesis |
| Title: | Electrical transport properties of heavily doped and compensated N-and P-type GaSb and N-type InSb |
| Researcher: | Malik, Anita |
| Guide: | Chaudhuri, K D |
| Department: | Department of Physics |
| Publisher: | University of Delhi |
| Place: | New Delhi |
| Year: | 1984 |
| Language: | English |
| Subject: | Physics | Crystallography | Electrical Properties | Physics |
| Dissertation/Thesis Note: | PhD |
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| 001 | 109735 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 035 | __ | |a(IN-AhILN)th_109735 |
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| 100 | __ | |aMalik, Anita|eResearcher |
| 110 | __ | |aDepartment of Physics|bUniversity of Delhi|dNew Delhi|eIn |
| 245 | __ | |aElectrical transport properties of heavily doped and compensated N-and P-type GaSb and N-type InSb |
| 260 | __ | |aNew Delhi|bUniversity of Delhi|c1984 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aCrystallography |
| 653 | __ | |aElectrical Properties |
| 700 | __ | |aChaudhuri, K D|eGuide |
| 905 | __ | |anotification |
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