Title : STUDY OF INHOMOGENEOUSLY DOPED SILICON BY DIFFERENTIAL SHEET RESISTIVITY MEASUREMENTS AND MOS ANALYS

Type of Material: Thesis
Title: STUDY OF INHOMOGENEOUSLY DOPED SILICON BY DIFFERENTIAL SHEET RESISTIVITY MEASUREMENTS AND MOS ANALYS
Researcher: Anil Kumar
Guide: Chattopadhyaya, S K
Department: Department of Physics
Publisher: Kurukshetra University
Place: Kurukshetra
Year: 1987
Language: English
Subject: Physics
Physics
Accession No: 235049
Dissertation/Thesis Note: PhD

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035__|a(IN-AhILN)th_10186
040__|aKRKT_132119|dIN-AhILN
041__|aeng
100__|aAnil Kumar|eResearcher
110__|aDepartment of Physics|bKurukshetra University|dKurukshetra|eIn
245__|aSTUDY OF INHOMOGENEOUSLY DOPED SILICON BY DIFFERENTIAL SHEET RESISTIVITY MEASUREMENTS AND MOS ANALYS
260__|aKurukshetra|bKurukshetra University|c1987
502__|bPhD
650__|aPhysics|2UGC
653__|aPhysics
700__|aChattopadhyaya, S K|eGuide
852__|p235049
905__|anotification

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