| Type of Material: | Thesis |
| Title: | RADIATION SENSITIVE SEMICONDUCTOR DEVICES(A COMPARATIVE EVALUATION OF FABRICATION PARAMETERS OF P AN |
| Researcher: | Batra, Anil Kumar |
| Guide: | Aditya, P K |
| Department: | Department of Physics |
| Publisher: | Kurukshetra University |
| Place: | Kurukshetra |
| Year: | 1974 |
| Language: | English |
| Subject: | Physics | Physics |
| Accession No: | 147518 |
| Dissertation/Thesis Note: | PhD |
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| 001 | 10149 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 100 | __ | |aBatra, Anil Kumar|eResearcher |
| 110 | __ | |aDepartment of Physics|bKurukshetra University|dKurukshetra|eIn |
| 245 | __ | |aRADIATION SENSITIVE SEMICONDUCTOR DEVICES(A COMPARATIVE EVALUATION OF FABRICATION PARAMETERS OF P AN |
| 260 | __ | |aKurukshetra|bKurukshetra University|c1974 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 700 | __ | |aAditya, P K|eGuide |
| 852 | __ | |p147518 |
| 905 | __ | |anotification |
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